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Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
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84130.pdf
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Date
2010
Authors
Ashraf, H.
Sridhara Rao, D.V.
Gogova, D.
Siche, D.
Fornari, R.
Humphreys, C.J.
Hageman, P.R. Paul
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https://hdl.handle.net/2066/84130
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