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Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
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112576.pdf
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Date
1997
Authors
Hageman, P.R. Paul
Tenijenhuis, J.
Anders, M.J.
Giling, L.J. Lodevicus Johannes
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https://hdl.handle.net/2066/112576
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