Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
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Weyher, J.L. Jan
Brown, P.D.
Zauner, A.R.A.
Müller, S. Simona
Boothroyd, C.B.
Foord, D.T.
Hageman, P.R. Paul
Humphreys, C.J.
Larsen, P.K.
Grzegory, I.