Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

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Access status: Embargo until 2233-03-22 , Primary 112553.pdf (697.78 KB)

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2008

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Grzegorczyk, A.P.
Weyher, J.L. Jan
Hageman, P.R. Paul
Larsen, P.K.

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https://hdl.handle.net/2066/112553

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