Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

Thumbnail Image

Files

Primary 84005.pdf (290.33 KB)

Date

2010

Authors

Ashraf, H.
Arshad, M.I.
Faraz, S.M.
Wahab, Q.
Hageman, P.R. Paul
Asghar, M.

Journal Title

Journal ISSN

Volume Title

Publisher

Research Projects

Organizational Units

Journal Issue

Abstract

Description

Keywords

Citation

URI

https://hdl.handle.net/2066/84005

Collections

Academic research output

Endorsement

Review

Supplemented By

Referenced By