Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
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Authors
Koenraad, P.M.
Blom, F.A.P.
Langerak, C.J.G.M.
Leys, M.R.
Perenboom, J.A.A.J. Jos
Singleton, J.
Spermon, S.J.R.M.
Vleuten, W.C. van der
Voncken, A.P.J.
Wolter, J.H.